Electrical properties of boron nitride thin films grown by neutralized nitrogen ion assisted vapor deposition
نویسندگان
چکیده
Boron nitride ~BN! thin films ~containing mixed cBN/hBN phase! have been deposited on Si~100! substrates using neutralized nitrogen beam and electron beam evaporation of boron. All as-deposited BN films were p type with a room-temperature carrier concentration in the range of 5310 to 1310 cm. The Mg-doped BN films showed carrier concentrations in the range of 1.2 310 cm to 5.2310 cm when the Mg cell temperature was varied from 250 to 500 °C. The films were analyzed for both majority elements ~B and N! and dopant/impurity ~Si, Mg, Fe, etc.! incorporation using secondary ion mass spectroscopy and mass spectroscopy of recoiled ions ~MRSI!. MRSI is shown to be superior for dopant characterization of boron nitride thin films. © 1996 American Institute of Physics. @S0003-6951~96!01605-1#
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